Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb specs.
Memory modules Specs >> Samsung >> Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb| Specifications | | | Reviews |
General characteristics Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb
Product Type:
DDR3
Form factor:
DIMM
Dual In-line Memory Module
Dual In-line Memory ModuleThe Capacity of one module:
4 Gb
Number of Pins:
240
Number of modules:
1
The number of ranks:
2
Memory Speed:
1333 MHz
Bandwidth:
10600 Mb/s
Support ECC:Error-Correcting Code
Error-Correcting CodeYes
Registered:
Yes
Low Profile:
Yes
Radiator:
No
Timing Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb
CL:Cas Latency
Cas Latency9
tRCD:Row Address to Column Address Delay
Row Address to Column Address Delay9
tRP:Row Precharge Time
Row Precharge Time9
tRAS:
24
Additional information Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb
Voltage:
1.5 V
Details Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb
Number:
18
Packaging:
Double sided
Reviews, Questions about Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb
Write Review / Ask a question about Samsung VLP DDR3 1333 Registered ECC DIMM 4Gb
Popular today
Patriot Memory PSD38G1066ERK
Memory type: DDR3; Form factor: DIMM 240-pin; Clock frequency: 1066 MHz; Volume: 2 4GB; ECC support: yes; UN-Buffered Memory (Registered): Yes; Low Profile Bracket (Low Profile): n...
ASint SSY3128M8-EAE1D
Memory type: DDR3; Form factor: SODIMM 204-pin; Clock frequency: 1066 MHz; Bandwidth: 8500 MB/s; Volume: 1 module 1 GB; ECC support: no; UN-Buffered Memory (Registered): no; Low Pr...
The other day there was a closed presentation of the Semiconductor Engineering Standardization Committee (JEDEC), and information from the event leaked into the network. It was devoted to the development of new memory standards, namely LPDDR6 and DDR6.