Mobiles     Laptops     Tablets     Computers     Hardware  Components       Electronics

Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC specs.

  Memory modules Specs >> Micron >> Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC
Specifications | Reviews


Features Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC
Certification:
REACH
Lead plating:
Gold
Memory voltage:
1.2 V
Memory ranking:
2
CAS latency:
19
ECC:
Yes
Memory form factor:
288-pin DIMM
Component for:
PC/Server
Memory clock speed:
2666 MHz
Internal memory type:
DDR4
Memory layout (modules x size):
1 x 32 GB
Internal memory:
32 GB
Buffered memory type:
Unregistered (unbuffered)
Operational conditions Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC
Operating temperature (T-T):
0 - 95 °C
Technical details Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC
Sustainability certificates:
RoHS
Weight & dimensions Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC
Height:
18.9 mm
Depth:
3.9 mm
Width:
133.5 mm


Reviews, Questions about Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC




Write Review / Ask a question about Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC
 
  
      9+9= *


Popular today


Kingston KVR16N11S8/4-SP
Kingston KVR16N11S8/4-SP
Product Type: DDR3; Form factor: DIMM; The Capacity of one module: 4 Gb; Number of modules: 1; Memory Speed: 1600 MHz; Bandwidth: 12800 Mb/s; Support ECC: No; CL: 11; tRCD: 11; tRP...
OCZ OCZ3G1600LV2G
OCZ OCZ3G1600LV2G
Memory type: DDR3; Form factor: DIMM 240-pin; Clock frequency: 1600 MHz; Bandwidth: 12800 MB/s; Volume: 1 module 2 GB; ECC support: no; UN-Buffered Memory (Registered): no; Low Pro...




Micron MTA18ADF4G72AZ-2G6B2 32 GB 1 x 32 GB DDR4 2666 MHz ECC
news
 Potential speeds for LPDDR6 and DDR6 memory are named

The other day there was a closed presentation of the Semiconductor Engineering Standardization Committee (JEDEC), and information from the event leaked into the network. It was devoted to the development of new memory standards, namely LPDDR6 and DDR6.