Mobiles     Laptops     Tablets     Computers     Hardware  Components       Electronics

Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit specs.

  Memory modules Specs >> Corsair >> Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit
Specifications | Reviews


General Specs Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit
Manufacturer:
Corsair
Manufacturer Part Number:
CMZ8GX3M2A2133C11B
Brand Name:
Corsair
Product Line:
Vengeance
Product Name:
Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit
Product Type:
RAM Module
Detailed Specs Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit
Memory Size:
8 GB
Memory Technology:
DDR3SDRAM
Memory Voltage:
1.50 V
Number of Modules:
2 x 4 GB
Memory Speed:
2133 MHz
Signal Processing:
Unbuffered
Plating:
Gold Plated
CAS Latency:
CL11
Features:
Heatsink
Additional Information Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit
Number of Pins:
240-pin
Form Factor:
DIMM?Dual In-line Memory Module


Reviews, Questions about Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit




Write Review / Ask a question about Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit
 
  
      4+6= *


Popular today


Kingston KVR16N11S8/4-SP
Kingston KVR16N11S8/4-SP
Product Type: DDR3; Form factor: DIMM; The Capacity of one module: 4 Gb; Number of modules: 1; Memory Speed: 1600 MHz; Bandwidth: 12800 Mb/s; Support ECC: No; CL: 11; tRCD: 11; tRP...
OCZ OCZ3G1600LV2G
OCZ OCZ3G1600LV2G
Memory type: DDR3; Form factor: DIMM 240-pin; Clock frequency: 1600 MHz; Bandwidth: 12800 MB/s; Volume: 1 module 2 GB; ECC support: no; UN-Buffered Memory (Registered): no; Low Pro...




Corsair Vengeance CMZ8GX3M2A2133C11B 8GB 2133MHz CL11 DDR3 Dual Channel Kit
news
 Potential speeds for LPDDR6 and DDR6 memory are named

The other day there was a closed presentation of the Semiconductor Engineering Standardization Committee (JEDEC), and information from the event leaked into the network. It was devoted to the development of new memory standards, namely LPDDR6 and DDR6.