Mobiles     Laptops     Tablets     Computers     Hardware  Components       Electronics

Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM specs.

  Memory modules Specs >> Corsair >> Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM
Specifications | Reviews


General Specs Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM
Manufacturer:
Corsair
Manufacturer Part Number:
CMSO4GX3M1C1333C9
Brand Name:
Corsair
Product Line:
ValueSelect
Product Name:
Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM
Product Type:
RAM Module
Detailed Specs Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM
Memory Size:
4 GB
Memory Technology:
DDR3SDRAM
Memory Voltage:
1.35 V
Number of Modules:
1 x 4 GB
Memory Speed:
1333 MHz
Memory Standard:
DDR3-1333/PC3-10600
Signal Processing:
Unbuffered
CAS Latency:
CL9
Additional Information Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM
Number of Pins:
204-pin
Form Factor:
SoDIMM?Small Outline Dual In-line Memory Module


Reviews, Questions about Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM




Write Review / Ask a question about Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM
 
  
      4+5= *


Popular today


Patriot Memory PGV316G1600ELQK
Patriot Memory PGV316G1600ELQK
Memory type: DDR3; Form factor: DIMM 240-pin; Clock frequency: 1600 MHz; Bandwidth: 12800 MB/s; Volume: 4 module 4 GB; ECC support: no; UN-Buffered Memory (Registered): no; Low Pro...
Corsair CMK16GX4M2B3000C15
Corsair CMK16GX4M2B3000C15
Product Type: DDR4; Form factor: DIMM; The Capacity of one module: 8 Gb; Number of Pins: 288; Number of modules: 2; Memory Speed: 3000 MHz; Bandwidth: 24000 Mb/s; Support ECC: No; ...




Corsair Laptop Memory CMSO4GX3M1C1333C9 4GB 1333MHz CL9 DDR3L SODIMM
news
 Potential speeds for LPDDR6 and DDR6 memory are named

The other day there was a closed presentation of the Semiconductor Engineering Standardization Committee (JEDEC), and information from the event leaked into the network. It was devoted to the development of new memory standards, namely LPDDR6 and DDR6.