V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR specs.
Memory modules Specs >> V7 >> V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR| Specifications | | | Reviews |
Features V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR
Certification:
CE
Memory voltage:
1.2 V
Memory ranking:
1
ECC:
No
Memory form factor:
260-pin SO-DIMM
Memory clock speed:
2666 MHz
Internal memory type:
DDR4
Memory layout (modules x size):
1 x 8 GB
Internal memory:
8 GB
Buffered memory type:
Unregistered (unbuffered)
Packaging data V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR
Package type:
Blister
Package height:
15 mm
Package depth:
170 mm
Package width:
55 mm
Technical details V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR
Sustainability certificates:
RoHS
Weight & dimensions V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR
Weight:
30 g
Reviews, Questions about V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR
Write Review / Ask a question about V7 8GB DDR4 PC4-21300 - 2666MHZ 1.2V SO DIMM V7213008GBS-SR
Popular today
Patriot Memory PSD38G1066ERK
Memory type: DDR3; Form factor: DIMM 240-pin; Clock frequency: 1066 MHz; Volume: 2 4GB; ECC support: yes; UN-Buffered Memory (Registered): Yes; Low Profile Bracket (Low Profile): n...
ASint SSY3128M8-EAE1D
Memory type: DDR3; Form factor: SODIMM 204-pin; Clock frequency: 1066 MHz; Bandwidth: 8500 MB/s; Volume: 1 module 1 GB; ECC support: no; UN-Buffered Memory (Registered): no; Low Pr...
XPG, in collaboration with GIGABYTE Technology, has managed to overclock its LANCER RGB DDR5 RAM module to 12,762 MT/s, setting a world record. The test was conducted by GIGABYTE's renowned overclocker and engineer HiCookie.
The G.Skill range has been expanded with new DDR5 memory modules with frequencies from 6000 to 8000 MHz, small timings and support for AMD EXPO overclocking profiles.
Samsung presented its first SSD with support for the modern PCIe Gen 5 interface and NVMe 2.0 protocol. The novelty with the index 9100 Pro, according to the manufacturer, became twice as fast as the flagship of the last generation.