Goodram GR2666S464L19S/8G 8 GB 1 x 8 GB DDR4 2666 MHz specs.
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Features Goodram GR2666S464L19S/8G 8 GB 1 x 8 GB DDR4 2666 MHz
Module configuration:
1024M x 8
Memory voltage:
1.2 V
CAS latency:
19
ECC:
No
Memory form factor:
260-pin SO-DIMM
Component for:
Notebook
Memory clock speed:
2666 MHz
Internal memory type:
DDR4
Memory layout (modules x size):
1 x 8 GB
Internal memory:
8 GB
Buffered memory type:
Unregistered (unbuffered)
Packaging data Goodram GR2666S464L19S/8G 8 GB 1 x 8 GB DDR4 2666 MHz
Package type:
Blister
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